Transistor VT Variation, VDD Scaling and Leakage Power

The on/off threshold voltage (VT) of the millions of transistors on a modern integrated circuit (IC) unintentionally vary across each IC as well as between ICs. This VT variation reduces performance, increases power consumption, and limits power supply (VDD) scaling. SuVolta’s technology reduces VT variation, and this reduction enables the reduction of both active power through VDD scaling and leakage power consumption through eliminating the worst-case tail of the transistor VT distribution that causes the majority of IC product leakage.

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Body Effect and Body Biasing

SuVolta’s circuits and design techniques take advantage of the unique properties of the DDC transistor to further reduce power consumption by managing threshold voltage (VT) more effectively than possible with a conventional transistor through the use of body bias.

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SuVolta PowerShrink™ Planar, Bulk CMOS Low-Power Platform

Controlling power consumption is a key enabler for adding product features and scaling semiconductor process technologies as the world uses more and more mobile electronics products.

SuVolta’s PowerShrink™ low-power CMOS platform significantly lowers power consumption without sacrificing performance across a wide range of integrated circuit (IC) products, including the processors, SRAMs, and SOCs that are critical to today’s mobile systems.

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Video: Planar, bulk CMOS advanced
device technology

SuVolta’s PowerShrink low-power platform encompasses SuVolta’s Deeply Depleted Channel™ (DDC) CMOS transistor, as well as SuVolta’s DDC-optimized circuits and design techniques to take full advantage of the DDC transistor.

By enabling continued voltage scaling as well as leakage reduction, the SuVolta technology can cut in half the active power consumption of 65nm process technologies as well as reduce leakage power consumption by 5x or more.

In addition, SuVolta has demonstrated large SRAM blocks operating below 0.5 volts, thereby confirming that the technology enables circuit functionality at far greater than 50 percent active power consumption scaling. This sub-0.5 volt operating voltage is significantly lower than typical SRAM minimum operating voltages (VDD-min) of 0.8 volts and higher in conventional CMOS technologies.

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The_Economist.jpgPLUGGING THE LEAKS: AS PHYSICAL LIMITS BITE, ELECTRONIC ENGINEERS MUST BUILD EVER CLEVERER TRANSISTORS

 

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SuVolta Wins Prestigious IEEE Spectrum 2012 Emerging Technology ACE Award

28 March 2012

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SuVolta Named ACE Awards Finalist for Both Startup of the Year and Design Team of the Year by UBM Electronics

13 February 2012

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“In a world where mobile applications increasingly dominate, power and cost are the primarily limiters of scaling semiconductor process technologies.  SuVolta has developed an innovative way to significantly reduce CMOS transistor active and leakage power. By tightening threshold voltage variability while maintaining performance at lower supply voltage, SuVolta’s platform extends the useful life of bulk planar CMOS processes and the products they enable and negates the need for costly, complex technologies like EUV lithography, FD-SOI or FinFETs. Furthermore, the technology enables companies to preserve and extend the legacy IP blocks they have spent years developing.”

 

T.J. Rodgers, Founder, President and Chief Executive Officer and Director, Cypress Semiconductor

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